1.  Substantially Enhanced Properties of CVD grown 2D WS₂: High Concentration of Caption Substitutional Doping by Erbium against Vacancy Generation, Research, 2022, Doi.org/10.34133/2022/9840970.  

　　2.  Fast and Broadband Photoresponse of a Few-Layer GeSe Field E？ect Transistor with Direct Band Gaps，ACS Appl. Mater. Interfaces 2019, 11, 38031？38038.  

　　3.  Band structure and photoelectric characterization of GeSe monolayer, Advacend Functional Materials, 2018, 28, 1704855.  

　　4. Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method, ACS Appl. Mater. Interfaces 2023, 15, 33, 39732–39739.  

　　5.  Supersensitive and Broadband Photodetectors Based on High Concentration of Er³⁺/Yb³⁺ Co-doped WS₂ Monolayer, Advanced Optical Materials, 2023, DOI: 10.1002/adom.202302229.